Recently, the Samsung Galaxy Tab Active3 tablet appeared on the Geekbench benchmark platform, revealing its chipset and memory capacity.
In the Geekbench benchmark test, the Galaxy Tab Active3 is powered by a Samsung Exynos 9810 chipset. This chipset is manufactured using a 10nm FinFET process and features an octa-core architecture, including four custom cores clocked at 2.9 GHz and four Cortex-A55 cores clocked at 1.9 GHz.
According to previous reports, the SM-T570 is the Wi-Fi version of the Galaxy Tab Active3. With the Exynos 9810 processor, the tablet scored 306 points in the single-core test and 1324 points in the multi-core test in Geekbench 5. Its performance did not meet expectations. The tablet that appeared on Geekbench this time is a 4GB RAM version.
Previous reports indicated that the Galaxy Tab Active3 will use a standard display with wide bezels and a home button. Some certifications also indicate that the device will come with a 4900mAh battery and support 18W fast charging.
As we previously reported, this tablet will be available in Wi-Fi and 4G versions. The SIM variant will also be available in the dual-SIM version.
The Samsung Galaxy Tab Active series is popular for its rugged and durable design, making it especially suitable for industrial or harsh environments. The tablet is also IP68 certified and meets MIL-STD-810G military standards.
There is no official announcement about the launch of this phone at the moment, but it is expected to be launched soon.