Recently, the upcoming new tablet device from Samsung, “Galaxy Tab Active3,” has been spotted on Geekbench. The Geekbench revealed the chipset and RAM capacity of the new tablet device from Samsung.
In the Geekbench, the “Galaxy Tab Active3” is powered by Samsung’s old flagship chipset “Exynos 9810”. The chipset is based on a 10nm FinFET manufacturing process. It consists of eight cores, in which there are four performance custom cores clocked @2.9GHz, and four energy-efficient Cortex-A55 cores clocked @1.9GHz.
The model number “SM-T570” is the Wi-Fi variant of Galaxy Tab Active3, as we previously reported. With Exynos 9810, the tablet has scored 306 points on single-core, while on multi-core, it has scored 1324 points. The performance score is not as good as it should be.
The RAM storage variant which got spotted on Geekbench is a 4 Gigs RAM variant.
Previously, it was reported that the upcoming Galaxy Tab Active3 would feature an ordinary display with large bezels and a home button (like the previous model). Moreover, some other certifications also revealed that a 4900mAh Battery would power it with 18W fast charging.
As we reported, the phone will be available in both Wi-Fi and 4G variants. Moreover, the SIM variant will also be available in the Dual-SIM version.
Samsung’s Galaxy Tab Active series is popular for its rugged design, especially used in industries or hard conditions. Moreover, the models of the Galaxy Tab Active series are also IP68 certified (dust and waterproof resistant) and MIL-STD-810G compliant*.
Currently, there is no official announcement regarding the launch of the phone. But it is expected that it may launch soon.