A few days ago, Realme confirmed that it will soon release the Realme GT 5 in the Chinese market. So far, Realme has not revealed any release date. However, they revealed the basic specifications of the Realme GT 5.
This morning, Realme revealed some of the specifications and appearance of the Realme GT 5. As you can see, the Realme GT 5 was designed in collaboration with Naoto Fukasawa, a contemporary Japanese industrial designer who works in product and furniture design.
The designer was also involved in the design of the Realme GT Master Edition. The design of the Realme GT 5 looks very similar to the Realme GT Master Edition. The device has a rectangular camera module on the back and three camera lenses (50MP, 8MP, and 2MP).
Realme also revealed that the Realme GT 5 will support 240W fast charging, which is currently the highest in the industry. In addition to 240W charging, the smartphone is expected to be available in two battery versions, just like its predecessor.
Realme stated that the top variant will come with 1TB of storage, while they have previously revealed that the top variant has 24GB of RAM.
According to sources, the Realme GT 5 will be powered by the Snapdragon 8 Gen 2 chipset based on TSMC’s 4nm manufacturing process. It has a Cortex-X3 super core, a Snapdragon X70 5G modem, and an Adreno 740 GPU.
Realme is expected to announce the release date and more highlights of the Realme GT 5 in the coming days.
